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Titolo:
LASER-CHEMICAL VAPOR-DEPOSITION OF TIN AND TIC FILMS
Autore:
CAO LX; FENG ZC; LIANG Y; HOU WL; ZHANG BC; WANG YQ; LI L;
Indirizzi:
CHINESE ACAD SCI,INST PHYS BEIJING 100080 PEOPLES R CHINA CHINESE ACAD SCI,INST PHYS BEIJING 100080 PEOPLES R CHINA CHINESE ACAD SCI,INST MET RES SHENYANG 110015 PEOPLES R CHINA
Titolo Testata:
Thin solid films
fascicolo: 1, volume: 257, anno: 1995,
pagine: 7 - 14
SICI:
0040-6090(1995)257:1<7:LVOTAT>2.0.ZU;2-C
Fonte:
ISI
Lingua:
ENG
Keywords:
CHEMICAL VAPOR DEPOSITION; GROWTH MECHANISM; TITANIUM CARBIDE; TITANIUM NITRIDE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
10
Recensione:
Indirizzi per estratti:
Citazione:
L.X. Cao et al., "LASER-CHEMICAL VAPOR-DEPOSITION OF TIN AND TIC FILMS", Thin solid films, 257(1), 1995, pp. 7-14

Abstract

Laser chemical vapour deposition (LCVD) of TiN and TiC films has beenachieved by scanning linear deposition in a dynamic atmosphere on AISI 52100 bearing steel using TiCl4, NH3, C2H4 and H-2 as reactant gasesinduced by CO2 laser. It has been found in our experiment that hydrogen played an important role in the LCVD TIN process. LCVD TiN film is golden in colour, single phase, stoichiometric in composition and homogeneously distributed. Preferential orientation of LCVD TIN film is correlated with deposition pressure. The microstructure of LCVD TiN filmcomprises about 2 mu m equiaxial particles, each particle consisting of about 15 nm nanocrystalline grains. The average Knoop microhardnessof LCVD TiN films is HK 1400 and the highest is HK 1602.3. The wear resistance of LCVD TIN film is four times that of the substrate. LCVD TiC film, with no preferential orientation, comprises homogeneous stoichiometric single-phase equiaxial particles.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 26/09/20 alle ore 14:45:07