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Titolo:
KINETICS OF HYDROGEN DESORPTION FROM GERMANIUM-COVERED SI(100)
Autore:
RUSSELL NM; EKERDT JG;
Indirizzi:
UNIV TEXAS,DEPT CHEM ENGN AUSTIN TX 78712 UNIV TEXAS,DEPT CHEM ENGN AUSTIN TX 78712
Titolo Testata:
Surface science
fascicolo: 1-3, volume: 369, anno: 1996,
pagine: 51 - 68
SICI:
0039-6028(1996)369:1-3<51:KOHDFG>2.0.ZU;2-Y
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL-VAPOR-DEPOSITION; GROWTH-RATE ENHANCEMENT; THIN-FILM GROWTH; PI-BONDED DIMERS; ULTRAHIGH-VACUUM; EPITAXIAL SILICON; MONOHYDRIDE PHASE; H-2 DESORPTION; TEMPERATURE-DEPENDENCE; ELECTRONIC-STRUCTURE;
Keywords:
DIGERMANE; DISILANE; GERMANIUM; HYDRIDES; HYDROGEN; LOW INDEX SINGLE CRYSTAL SURFACES; MODELS OF SURFACE CHEMICAL REACTIONS; MODELS OF SURFACE KINETICS; SEMIEMPIRICAL MODELS AND MODER CALCULATIONS; SEMICONDUCTING SURFACES; SILICON; SILICON-GERMANIUM; SURFACE CHEMICAL REACTION; SURFACE DIFFUSION; THERMAL DESORPTION; THERMAL DESORPTION SPECTROSCOPY;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
69
Recensione:
Indirizzi per estratti:
Citazione:
N.M. Russell e J.G. Ekerdt, "KINETICS OF HYDROGEN DESORPTION FROM GERMANIUM-COVERED SI(100)", Surface science, 369(1-3), 1996, pp. 51-68

Abstract

Two models from the recent literature, proposed to describe the apparent effect of Ge coverage on silicon monohydride desorption kinetics, are evaluated based on their ability to fit temperature-programmed desorption data, an evaluation of the physical consistency of the estimated kinetic constants, and a comparison with the effects of other atomic impurities (B, P, C) on hydrogen desorption from Si(100). The first model attributes the decrease in the peak temperature for silicon monohydride (beta(1)) desorption with increasing Ge coverage to a long-range electronic effect that reduces the activation barrier uniformly over the entire surface. It is shown that this model fails to fit the high Ge coverage data unless the preexponential factor also decreases by approximately nine orders of magnitude, which is physically implausible. The second model considers the possibility of an alternate pathway to depopulate the silicon monohydride phase, in which hydrogen diffuses from the silicon to the germanium surface phase, and desorbs rapidlyfrom a short-lived GeH intermediate. The estimated activation barrierfor the surface migration step of 25+/-1 kcal mol(-1) is thermodynamically consistent with the energetics of hydrogen desorption from Si and Ge, and its magnitude is intermediate between the estimated activation barriers for hydrogen surface diffusion on Si and Ge. Although Ge may modify the energetics of the interaction of hydrogen and silicon, it is concluded that such an effect alone is insufficient to describe the shift and broadening of the beta(1) feature, while the GeH intermediate model succeeds, even in the absence of any such effect.

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Documento generato il 02/12/20 alle ore 17:48:51