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Titolo:
ION-IMPLANTATION IN CVD DIAMOND AND PLASMA TREATMENT EFFECT
Autore:
YAGYU H; DEGUCHI M; WON JH; MORI Y; HATTA A; KITABATAKE M; ITO T; HIRAO T; HIRAKI A;
Indirizzi:
OSAKA UNIV,FAC ENGN,DEPT ELECT ENGN SUITA OSAKA 565 JAPAN OSAKA UNIV,FAC ENGN,DEPT ELECT ENGN SUITA OSAKA 565 JAPAN MATSUSHITA ELECT IND CO LTD,CENT RES LABS KYOTO 61902 JAPAN
Titolo Testata:
DIAMOND AND RELATED MATERIALS
fascicolo: 5-6, volume: 4, anno: 1995,
pagine: 575 - 579
SICI:
0925-9635(1995)4:5-6<575:IICDAP>2.0.ZU;2-3
Fonte:
ISI
Lingua:
ENG
Soggetto:
NATURAL DIAMOND; ELECTRICAL-PROPERTIES; BORON; LAYERS; FILMS; TEMPERATURE; REGROWTH; DEFECTS; DAMAGE;
Keywords:
MICROWAVE PLASMA CVD; ION IMPLANTATION; PLASMA TREATMENT; CATHODOLUMINESCENCE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
20
Recensione:
Indirizzi per estratti:
Citazione:
H. Yagyu et al., "ION-IMPLANTATION IN CVD DIAMOND AND PLASMA TREATMENT EFFECT", DIAMOND AND RELATED MATERIALS, 4(5-6), 1995, pp. 575-579

Abstract

Chemical-vapour-deposited (CVD) diamond, implanted with 100 keV B-11() or (31)p(+) ions to doses in the range 10(14)-10(16) Cm-2 at room temperature, was exposed to a CO(1%)/H-2(99%) plasma in order to restore the implantation damage; this was compared with H-2(100%) plasma treatment that has been reported to be effective for damage restoration. Cathodoluminescence (CL), Raman spectroscopy and resistivity measurements were employed to characterize the implanted and subsequently plasma-treated diamond films. The CO/H-2 plasma suppresses the removal of the damaged regions between the surface and the projected range (R(p)) relative to H-2 plasma treatment for the sample implanted with high (approximately 10(16) cm(-2)) doses. However, it causes partial capping around the defects. The sample treated with the CO/H-2 plasma shows resistivities from 1 x 10(3) Omega cm at 333 K to 2 x 10(1) Omega cm at 500 K, which may be caused by the low recombination rate of implanted atoms with the vacancies; its activation energy of 0.34 eV is in agreement with that of previous work.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 10/07/20 alle ore 10:33:12