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Titolo:
X-RAY-EXAMINATION OF SIC MONOCRYSTALS
Autore:
DRESSLER L; GOETZ K; KRAUSSLICH J;
Indirizzi:
UNIV JENA,FAK PHYS ASTRON TECH WISSENSCHAFT,INST OPT & QUANTENELEKTR,MAX WIEN PLATZ 1 D-07743 JENA GERMANY
Titolo Testata:
Physica status solidi. a, Applied research
fascicolo: 1, volume: 148, anno: 1995,
pagine: 81 - 88
SICI:
0031-8965(1995)148:1<81:XOSM>2.0.ZU;2-M
Fonte:
ISI
Lingua:
ENG
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
19
Recensione:
Indirizzi per estratti:
Citazione:
L. Dressler et al., "X-RAY-EXAMINATION OF SIC MONOCRYSTALS", Physica status solidi. a, Applied research, 148(1), 1995, pp. 81-88

Abstract

Five X-ray methods (Lang topography, one-crystal rocking curves with scan-step registration, two-crystal diffractometry, Bond measurements,detection of double reflections caused by Umweganregung) are used forreal structure examination of SiC bulk crystals. The most important result is that Bond measurements show only relatively weak changes of the lattice constants between measuring points of a given sample (deviations lower than 10 ppm for the lattice constant c). However, the other diagnostic techniques show greater lattice distortions. The differences in the lattice constants between different samples of the same polytype may reach up to 100 ppm.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 28/09/20 alle ore 15:00:49