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Titolo:
STRUCTURAL STUDIES OF III-V AND GROUP-IV SEMICONDUCTORS AT HIGH-PRESSURE
Autore:
NELMES RJ; MCMAHON MI; WRIGHT NG; ALLAN DR; LIU H; LOVEDAY JS;
Indirizzi:
UNIV EDINBURGH,DEPT PHYS & ASTRON,MAYFIELD RD EDINBURGH EH9 3JZ MIDLOTHIAN SCOTLAND
Titolo Testata:
Journal of physics and chemistry of solids
fascicolo: 3-4, volume: 56, anno: 1995,
pagine: 539 - 543
SICI:
0022-3697(1995)56:3-4<539:SSOIAG>2.0.ZU;2-U
Fonte:
ISI
Lingua:
ENG
Soggetto:
PHASE-TRANSITIONS; GPA; EQUATION; STATE; INSB; GERMANIUM; STABILITY; MBAR; SI;
Keywords:
SEMICONDUCTORS; HIGH PRESSURE; X-RAY DIFFRACTION; PHASE TRANSITIONS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
25
Recensione:
Indirizzi per estratti:
Citazione:
R.J. Nelmes et al., "STRUCTURAL STUDIES OF III-V AND GROUP-IV SEMICONDUCTORS AT HIGH-PRESSURE", Journal of physics and chemistry of solids, 56(3-4), 1995, pp. 539-543

Abstract

Extensive new structural results on II-VI, III-V and group IV semiconductors under pressure have been obtained over the past two years at SRS Daresbury, using angle-dispersive techniques and an image-plate detector. In this paper, a brief overview is presented of recent work on Si, Ge, GaSb, InSb, InAs, InP and GaAs.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 15/08/20 alle ore 19:55:12