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Titolo:
STRUCTURAL STUDIES OF TETRAHEDRALLY-COORDINATED SEMICONDUCTORS AT HIGH-PRESSURE - NEW SYSTEMATICS
Autore:
MCMAHON MI; NELMES RJ;
Indirizzi:
UNIV EDINBURGH,DEPT PHYS & ASTRON,MAYFIELD RD EDINBURGH EH9 3JZ MIDLOTHIAN SCOTLAND
Titolo Testata:
Journal of physics and chemistry of solids
fascicolo: 3-4, volume: 56, anno: 1995,
pagine: 485 - 490
SICI:
0022-3697(1995)56:3-4<485:SSOTSA>2.0.ZU;2-O
Fonte:
ISI
Lingua:
ENG
Soggetto:
INDUCED PHASE-TRANSITIONS; X-RAY-DIFFRACTION; III-V; CINNABAR PHASE; GPA; EQUATION; STATE; SI; MBAR; INSB;
Keywords:
SEMICONDUCTORS; HIGH PRESSURE; X-RAY DIFFRACTION; PHASE TRANSITIONS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
47
Recensione:
Indirizzi per estratti:
Citazione:
M.I. Mcmahon e R.J. Nelmes, "STRUCTURAL STUDIES OF TETRAHEDRALLY-COORDINATED SEMICONDUCTORS AT HIGH-PRESSURE - NEW SYSTEMATICS", Journal of physics and chemistry of solids, 56(3-4), 1995, pp. 485-490

Abstract

Extensive new structural results on II-VI, III-V and group IV semiconductors under pressure have been obtained over the past two years al SRS Daresbury, using angle-dispersive techniques and an image-plate detector. The results show that the widely-accepted structural systematics of these semiconductors have to be substantially modified. The emerging new systematics are presented and discussed.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 21/09/20 alle ore 06:37:08