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Titolo:
IN-SITU X-RAY STUDIES OF ORGANOMETALLIC VAPOR-PHASE EPITAXY GROWTH
Autore:
FUOSS PH; KISKER DW; STEPHENSON GB; BRENNAN S;
Indirizzi:
AT&T BELL LABS MURRAY HILL NJ 07974 IBM CORP,DIV RES YORKTOWN HTS NY 10598 STANFORD SYNCHROTRON RADIAT LAB STANFORD CA 94309
Titolo Testata:
Materials science & engineering. B, Solid-state materials for advanced technology
fascicolo: 2-3, volume: 30, anno: 1995,
pagine: 99 - 108
SICI:
0921-5107(1995)30:2-3<99:IXSOOV>2.0.ZU;2-V
Fonte:
ISI
Lingua:
ENG
Soggetto:
SCATTERING;
Keywords:
X-RAY STUDIES; OMVPE; GALLIUM ARSENIDE; RHEED;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
19
Recensione:
Indirizzi per estratti:
Citazione:
P.H. Fuoss et al., "IN-SITU X-RAY STUDIES OF ORGANOMETALLIC VAPOR-PHASE EPITAXY GROWTH", Materials science & engineering. B, Solid-state materials for advanced technology, 30(2-3), 1995, pp. 99-108

Abstract

In this paper we present an overview of the use of X-ray measurementsto determine the atomic mechanisms of organometallic vapor phase epitaxy (OMVPE). Detailed information about OMVPE processes has been difficult to obtain because of the high pressure, chemically reactive environment present during growth. X-ray scattering measurements using veryintense synchrotron X-ray sources have been uniquely productive in determining the structure of surfaces during OMVPE growth. For example, surface smoothness, step ordering, growth modes, growth rates and surface reconstructions have been determined. In addition, X-ray spectroscopy measurements have revealed much about the complicated gas phase behavior in the OMVPE reactor. From these scattering and spectroscopy measurements, a more complete model of OMVPE growth is being developed.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 24/09/20 alle ore 07:34:05