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Titolo:
PREPARATION OF SIC FILMS BY SOLID-STATE SOURCE EVAPORATION
Autore:
FISSEL A; SCHROTER B; KRAUSSLICH J; RICHTER W;
Indirizzi:
UNIV JENA,INST FESTKORPERPHYS,MAX WIEN PL 1 D-07743 JENA GERMANY UNIV JENA,INST OPT & QUANTENELEKTRON D-07743 JENA GERMANY
Titolo Testata:
Thin solid films
fascicolo: 1-2, volume: 258, anno: 1995,
pagine: 64 - 66
SICI:
0040-6090(1995)258:1-2<64:POSFBS>2.0.ZU;2-0
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL VAPOR-DEPOSITION; LAYERS; GROWTH;
Keywords:
ANGER ELECTRON SPECTROSCOPY; PHYSICAL VAPOR DEPOSITION; SILICON CARBIDE; X-RAY DIFFRACTION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
12
Recensione:
Indirizzi per estratti:
Citazione:
A. Fissel et al., "PREPARATION OF SIC FILMS BY SOLID-STATE SOURCE EVAPORATION", Thin solid films, 258(1-2), 1995, pp. 64-66

Abstract

SiC thin films on Si(111) were grown using solid state evaporation atrelatively low temperatures, Growth rates of 3-10 nm min(-1) have been achieved at 750-900 degrees C. Results obtained from IR spectroscopy, Auger electron spectroscopy and X-ray diffraction indicate good crystalline growth at T > 800 degrees C in the case of a stoichiometric composition. The crystallinity was found to be deteriorated in layers with excess Si or C. In addition, shifts in the IR absorption peak indicate that the non-stoichiometric layers were highly stressed. Annealingof non-stoichiometric layers shifts the peak to the position obtainedfor stoichiometric layers.

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Documento generato il 30/09/20 alle ore 09:36:00