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Titolo:
THERMODYNAMIC BEHAVIOR OF GEO2 FORMED BY OXYGEN IMPLANTATION INTO RELAXED SI0.5GE0.5 ALLOY
Autore:
ZHANG JP; HEMMENT PLF; CASTLE JE; LIU HD; WATTS JF; KUBIAK RA; NEWSTEAD SM; WHALL TE; PARKER EHC;
Indirizzi:
UNIV SURREY,DEPT ELECTR & ELECT ENGN GUILDFORD GU2 5XH SURREY ENGLAND UNIV SURREY,DEPT MAT SCI GUILDFORD GU2 5XH SURREY ENGLAND UNIV WARWICK,DEPT PHYS COVENTRY CV4 7AL W MIDLANDS ENGLAND CHINESE ACAD SCI,SHANGHAI INST MET,ION BEAM LAB SHANGHAI 200050 PEOPLES R CHINA
Titolo Testata:
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
fascicolo: 1-2, volume: 96, anno: 1995,
pagine: 281 - 285
SICI:
0168-583X(1995)96:1-2<281:TBOGFB>2.0.ZU;2-6
Fonte:
ISI
Lingua:
ENG
Soggetto:
HIGH-DOSE OXYGEN; OXIDATION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
15
Recensione:
Indirizzi per estratti:
Citazione:
J.P. Zhang et al., "THERMODYNAMIC BEHAVIOR OF GEO2 FORMED BY OXYGEN IMPLANTATION INTO RELAXED SI0.5GE0.5 ALLOY", Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 281-285

Abstract

The thermal stability of GeO2 formed by oxygen implantation into Si0.5Ge0.5 alloy has been investigated and quantified. The sample used in this experiment consisted of a 900 nm relaxed layer of Si0.5Ge0.5 alloy capped with 78 nm of silicon which was grown on a (100) Si n-type wafer. This was then implanted with a dose of 1.8 X 10(18) O+/cm(2) at 200 keV and specimens from the implanted region were annealed for 1 h at various temperatures. The composition and thickness of the oxide layer, which consisted of SiO2+ GeO2 and redistribution of elemental silicon, germanium and oxygen were determined by Rutherford backscatteringspectroscopy. The chemical bonding of silicon and germanium to oxygenwas determined using X-ray photoelectron spectroscopy. It is found that the germanium was rejected from the oxide layer and segregated at the interface between SiGe/oxide and oxide/SiGe. The driving force for the mass transport can be attributed to the higher chemical potential of germanium in the oxide layer, which is a consequence of the difference in the free energies of formation of SiO2 and GeO2.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 20/09/20 alle ore 19:45:26