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Titolo:
AMORPHOUS DIAMOND-LIKE CARBON-FILMS - A HARD ANTI-REFLECTING COATING FOR SILICON SOLAR-CELLS
Autore:
ALALUF M; APPELBAUM J; KLIBANOV L; BRINKER D; SCHEIMAN D; CROITORU N;
Indirizzi:
TEL AVIV UNIV,FAC ENGN,DEPT ELECT ENGN PHYS ELECTR IL-69978 RAMAT AVIV ISRAEL NASA,LEWIS RES CTR CLEVELAND OH 44135
Titolo Testata:
Thin solid films
fascicolo: 1-2, volume: 256, anno: 1995,
pagine: 1 - 3
SICI:
0040-6090(1995)256:1-2<1:ADC-AH>2.0.ZU;2-1
Fonte:
ISI
Lingua:
ENG
Soggetto:
SCHOTTKY;
Keywords:
AMORPHOUS MATERIALS; DIAMOND; OPTICAL COATINGS; SOLAR CELLS;
Tipo documento:
Letter
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
9
Recensione:
Indirizzi per estratti:
Citazione:
M. Alaluf et al., "AMORPHOUS DIAMOND-LIKE CARBON-FILMS - A HARD ANTI-REFLECTING COATING FOR SILICON SOLAR-CELLS", Thin solid films, 256(1-2), 1995, pp. 1-3

Abstract

Amorphous diamond-line carbon (a:DLC) films are suitable for use as aprotective layer and/or anti-reflecting coating for silicon solar cells. Microhardness tests show a high hardness of about 4700 kg mm(-2) Optical measurements in the visible light on a silicon solar cell without anti-reflecting coating where a:DLC was deposited as an anti-reflecting (AR) coating, show a significant reduction in the reflection of the light of about 25-45% as compared with the reflection from the solar cell before deposition of the a:DLC film. The current-voltage (I-V) characteristics of solar cells without an anti-reflecting coating and with a:DLC as the AR coating layer show an improvement in the short circuit current (from 107 mA to 116 mA) and in the efficiency of the cell by 1% (from 8% to 9%). I-V characteristics of a solar cell with AR coating and deposited a:DLC (400 Angstrom thickness) over that film as a protective coating, show a slight reduction of the short circuit current (from 168 mA to 145 mA), and the efficiency of the solar cell decreases (16% to 14%). However, the microhardness was significantly increased.

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Documento generato il 02/12/20 alle ore 17:45:07