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Titolo:
INTERFACIAL REACTIONS OF W THIN-FILM ON SINGLE-CRYSTAL (001)BETA-SIC
Autore:
BAUD L; JAUSSAUD C; MADAR R; BERNARD C; CHEN JS; NICOLET MA;
Indirizzi:
CEN GRENOBLE,DMEL,CEA TECHNOL AVANCEES,LETI,17 AVE MARTYRS F-38054 GRENOBLE 9 FRANCE ECOLE NATL SUPER PHYS GRENOBLE,MAT & GENIE PHYS LAB F-38402 ST MARTINDHERES FRANCE ECOLE NATL SUPER ELECTROCHIM & ELECTROME GRENOBLE,LTPCM F-38402 ST MARTIN DHERES FRANCE CALTECH PASADENA CA 91125
Titolo Testata:
Materials science & engineering. B, Solid-state materials for advanced technology
fascicolo: 1-3, volume: 29, anno: 1995,
pagine: 126 - 130
SICI:
0921-5107(1995)29:1-3<126:IROWTO>2.0.ZU;2-G
Fonte:
ISI
Lingua:
ENG
Soggetto:
THERMODYNAMIC EVALUATION; BINARY-SYSTEMS; MO; TA;
Keywords:
SILICON CARBIDE; DIFFUSION; TUNGSTEN; CONTACT RESISTANCE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
17
Recensione:
Indirizzi per estratti:
Citazione:
L. Baud et al., "INTERFACIAL REACTIONS OF W THIN-FILM ON SINGLE-CRYSTAL (001)BETA-SIC", Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 126-130

Abstract

Interfacial reactions between a W thin film and a single-crystal (001) beta-SiC substrate on rapid thermal annealing a from 600 degrees C to 1100 degrees C for 60 a were investigated by backscattering,o spectrometry, X-ray diffraction, secondary ion mass spectrometry and cross-sectional transmission electron microscopy. Backscattering spectrometryshows that W reacts with SiC at 950 degrees C. The product phases identified by X-ray diffraction are W5Si3 and W2C. At 1100 degrees C no more unreacted W is detected. Current-voltage measurements show that ohmic contacts are already obtained on as-deposited W. Contact resistivity measured using the circular transmission line model is about 10(-3)Ohm cm(2). Thermodynamic studies of the solid phase stability in the ternary W-Si-C system help us to understand the chemical stability of W thin film.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 04/12/20 alle ore 13:25:40