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Titolo:
OBSERVATION OF SI OUT-DIFFUSION RELATED DEFECTS IN SIC GROWTH ON SI(001)
Autore:
DIANI M; MESLI A; KUBLER L; CLAVERIE A; BALLADORE JL; AUBEL D; PEYRE S; HEISER T; BISCHOFF JL;
Indirizzi:
UNIV HAUTE ALSACE,FAC SCI,PHYS & SPECT ELECT LAB,CNRS,URA 1435,4 RUE FRERES LUMIERE F-68093 MULHOUSE FRANCE UNIV HAUTE ALSACE,FAC SCI,PHYS & SPECT ELECT LAB,CNRS,URA 1435 F-68093 MULHOUSE FRANCE CTR RECH NUCL,PHYS & APPLICAT SEMICOND LAB,CNRS,UPR 292 F-67037 STRASBOURG 2 FRANCE CEMES,CNRS,LOE F-31055 TOULOUSE FRANCE
Titolo Testata:
Materials science & engineering. B, Solid-state materials for advanced technology
fascicolo: 1-3, volume: 29, anno: 1995,
pagine: 110 - 113
SICI:
0921-5107(1995)29:1-3<110:OOSORD>2.0.ZU;2-9
Fonte:
ISI
Lingua:
ENG
Soggetto:
DEVICES; SI(100); FILM; C2H2;
Keywords:
SILICON CARBIDE; SURFACE DIFFUSION; DEFECT FORMATION; MOLECULAR BEAM EPITAXY;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
20
Recensione:
Indirizzi per estratti:
Citazione:
M. Diani et al., "OBSERVATION OF SI OUT-DIFFUSION RELATED DEFECTS IN SIC GROWTH ON SI(001)", Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 110-113

Abstract

Good quality epitaxial beta-SiC growth on Si(001) substrates is conventionally obtained by various chemical vapour deposition processes using the reaction of carbon and silicon-containing gases at high temperature (around 1300 degrees C). We explore here an alternative route, atlower sample temperature, where SiC growth is obtained by molecular beam epitaxy evaporation of Si with C2H4 cracking on a surface held at 850 degrees C. Preliminary IR analyses show the expected absorption band at 794 cm(-1) of beta-SiC with a damping coefficient of 0.02 close to the theoretical value (0.01). Moreover, cross-sectional transmission electron microscopy and in-situ X-ray photoelectron spectroscopy studies revealed the presence of elemental Si on the SiC surface, relatedto out-diffusion of Si atoms from the substrate. This on-top diffusion generates large pyramid-shaped defects in the substrate along [011] directions and contributes to the formation of strong SIC islands emerging above other SIC regions presenting more regular two-dimensional growth. High resolution figures obtained by zooming on these islands allows us to probe their local polycrystalline atomic structure. These defects are not characteristic of our growth process as they were observed previously using other growth methods. Investigations are under way to determine a growth procedure which suppresses the formation of these defects.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 20/09/20 alle ore 04:56:13