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Titolo:
CATHODIC DEPOSITION OF TERNARY IN-X(AS+SB ALLOYS AND FORMATION OF INASXSB1)
Autore:
CATTARIN S; MUSIANI MM; CASELLATO U; GUERRIERO P; BERTONCELLO R;
Indirizzi:
CNR,IPELP,CORSO STATE UNITI 4 I-35020 PADUA ITALY CNR,ICTIMA I-35020 PADUA ITALY DIP CIMA I-35100 PADUA ITALY
Titolo Testata:
Journal of electroanalytical chemistry [1992]
fascicolo: 1-2, volume: 380, anno: 1995,
pagine: 209 - 218
Fonte:
ISI
Lingua:
ENG
Soggetto:
AS-SB ALLOYS; THIN-FILMS; ELECTRODEPOSITION; LAYERS; INDIUM;
Keywords:
THIN-FILM SEMICONDUCTORS; CATHODIC DEPOSITION; IN+AS+SB ALLOYS; INASXSB1-X;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
39
Recensione:
Indirizzi per estratti:
Citazione:
S. Cattarin et al., "CATHODIC DEPOSITION OF TERNARY IN-X(AS+SB ALLOYS AND FORMATION OF INASXSB1)", Journal of electroanalytical chemistry [1992], 380(1-2), 1995, pp. 209-218

Abstract

In + As + Sb alloys have been deposited onto Ni and Ti cathodes from tartaric acid solutions at pH 2. Homogeneous deposits of composition suitable for achieving InAsxSb1-x can be obtained from this medium. TheAs-to-Sb ratio can be controlled by properly selecting solution composition and deposition potential. X-ray photoelectron spectroscopy and X-ray diffraction analyses show that formation of III-V compounds occurs at room temperature. In reacts preferentially with As rather than with Sb, but crystalline phases formed at room temperature are Sb-rich. After annealing the In + As + Sb alloys at 250 degrees C, the composition calculated from cell parameters appears similar to that measured by energy-dispersive X-ray analysis, suggesting that the entire deposit has been converted into the InAsxSb1-x crystalline phase.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 24/09/20 alle ore 08:19:24