Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
DEPTH PROFILING OF INAS INP AND INXGA1-XAS/INAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY/
Autore:
BRUNI MR; GAMBACORTI N; KACIULIS S; MATTOGNO G; SIMEONE MG; VITICOLI S;
Indirizzi:
CNR,IST CHIM MAT,CP 10 I-00016 MONTEROTONDO ITALY SEMICOND PHYS INST VILNIUS 2600 LITHUANIA
Titolo Testata:
Materials science & engineering. B, Solid-state materials for advanced technology
fascicolo: 1-3, volume: 28, anno: 1994,
pagine: 228 - 231
SICI:
0921-5107(1994)28:1-3<228:DPOIIA>2.0.ZU;2-C
Fonte:
ISI
Lingua:
ENG
Soggetto:
ROOM-TEMPERATURE; SUPERLATTICES;
Keywords:
MOLECULAR BEAM EPITAXY; INDIUM ARSENIDE; X-RAY SPECTROSCOPY; GALLIUM ARSENIDE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
14
Recensione:
Indirizzi per estratti:
Citazione:
M.R. Bruni et al., "DEPTH PROFILING OF INAS INP AND INXGA1-XAS/INAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY/", Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 228-231

Abstract

Highly strained InAs/InP heterostructures and InxGa1-xAs/InAs single quantum wells on InP(100) substrates were grown by molecular beam epitaxy. The fabricated heterostructures were investigated by means of theselected-area X-ray photoelectron spectroscopy (SAXPS) depth profiling technique. The depth resolution of the SAXPS profiling was found to be limited mainly by the photoelectron information depth. It was demonstrated that the ternary compound InAsxPx is formed on the InP substrate during its deoxidation under an arsenic flux. The thickness of the InAsxP1-x interfacial sublayer was determined and the segregation of indium on the sample and substrate surfaces was revealed from the SAXPSprofiles.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 29/11/20 alle ore 23:00:01