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Titolo:
EFFECT OF ION-BEAM-INDUCED DISORDER ON OPTICAL INTERBAND-TRANSITIONS IN SI AND GAAS
Autore:
BHATIA KL; WILBERTZ C; DERST G; KALBITZER S;
Indirizzi:
MAHARSHI DAYANAND UNIV,DEPT PHYS ROHTAK 124001 HARYANA INDIA MAX PLANCK INST KERNPHYS D-69029 HEIDELBERG GERMANY
Titolo Testata:
Radiation effects and defects in solids
fascicolo: 4, volume: 128, anno: 1994,
pagine: 341 - 355
SICI:
1042-0150(1994)128:4<341:EOIDOO>2.0.ZU;2-L
Fonte:
ISI
Lingua:
ENG
Soggetto:
MODEL DIELECTRIC-CONSTANTS; IMPLANTED GAAS; SILICON; SPECTRA;
Keywords:
OPTICAL REFLECTION; ION-INDUCED DAMAGE; INTERBAND TRANSITION; INDIRECT BAND GAP; MICROCRYSTALS; SI; GAAS; AMORPHIZATION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
25
Recensione:
Indirizzi per estratti:
Citazione:
K.L. Bhatia et al., "EFFECT OF ION-BEAM-INDUCED DISORDER ON OPTICAL INTERBAND-TRANSITIONS IN SI AND GAAS", Radiation effects and defects in solids, 128(4), 1994, pp. 341-355

Abstract

Optical reflection spectra and their derivatives of Ar+ ion (75 keV) bombarded single crystals of Si and GaAs, with fluence ranging from 5x10(11)-1x10(15) ions cm(-2), have been investigated in the spectral region of interband optical transitions. The effect of ion-beam induced disorder on the interband transitions in the two categories of semiconductors (direct/indirect band gap) have been found to be quite different. This dissimilarity may be due to the different optical response ofthe intermediate microcrystalline component formed by ion-bombardmentduring the course of crystalline-to-amorphous transformation.

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Documento generato il 30/11/20 alle ore 03:31:05