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Titolo:
FORMATION OF THE ANODIC LEAD(II) OXIDE FILM ON LEAD IN ALKALINE-SOLUTION AND ITS SEMICONDUCTING PROPERTIES
Autore:
XIA SJ; ZHOU WF;
Indirizzi:
FUDAN UNIV,DEPT CHEM SHANGHAI 200433 PEOPLES R CHINA FUDAN UNIV,DEPT CHEM SHANGHAI 200433 PEOPLES R CHINA
Titolo Testata:
Journal of electroanalytical chemistry [1992]
fascicolo: 1-2, volume: 379, anno: 1994,
pagine: 361 - 364
Fonte:
ISI
Lingua:
ENG
Soggetto:
PHOTOELECTROCHEMICAL PROPERTIES; OXIDATION; PBO;
Keywords:
LEAD(II); OXIDE FILM;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
13
Recensione:
Indirizzi per estratti:
Citazione:
S.J. Xia e W.F. Zhou, "FORMATION OF THE ANODIC LEAD(II) OXIDE FILM ON LEAD IN ALKALINE-SOLUTION AND ITS SEMICONDUCTING PROPERTIES", Journal of electroanalytical chemistry [1992], 379(1-2), 1994, pp. 361-364

Abstract

The anodic lead(II) oxide studied was formed in 0.1 M NaOH solution (60 degrees C) at 0.2 V (vs. Hg/HgO) on a lead electrode. The composition of the oxide film, characterized by X-ray diffractometry and cyclicvoltammetry, is mainly tet-PbO, and small amounts of Pb2O3 and PbOx (1 < x < 2). The mechanism of formation of the oxide film was investigated using chronoamperometry. If was found that the oxide film forms bya diffusion mechanism. The results of ac impedance investigations show that the oxide film is an n-type semiconductor. The donor density and flat-band potential of the oxide film are 3.73 x 10(16) cm(-3) and -0.79 V respectively.

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Documento generato il 01/10/20 alle ore 07:39:21