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Titolo:
XPS STUDY OF THE INXGA1-XAS GAAS SUPERLATTICE
Autore:
KACIULIS S; MATTOGNO G; TREIDERIS G; VITICOLI S;
Indirizzi:
CNR,IST CHIM MAT,CP 10 I-00016 MONTEROTONDO ITALY SEMICOND PHYS INST VILNIUS 2600 LITHUANIA
Titolo Testata:
Journal of electron spectroscopy and related phenomena
fascicolo: 2, volume: 70, anno: 1994,
pagine: 145 - 149
SICI:
0368-2048(1994)70:2<145:XSOTIG>2.0.ZU;2-N
Fonte:
ISI
Lingua:
ENG
Soggetto:
DEPTH RESOLUTION; MULTILAYER STRUCTURES; SAMPLE ROTATION; QUANTUM-WELLS; PROFILES; LAYER; HETEROSTRUCTURES; TOPOGRAPHY;
Keywords:
DEPTH PROFILE; INGAAS; MOCVD; SAXPS; SUPERLATTICE; XPS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
25
Recensione:
Indirizzi per estratti:
Citazione:
S. Kaciulis et al., "XPS STUDY OF THE INXGA1-XAS GAAS SUPERLATTICE", Journal of electron spectroscopy and related phenomena, 70(2), 1994, pp. 145-149

Abstract

Strained InxGa1-xAs/GaAs superlattices have been grown on GaAs(100) substrates using a metal-organic chemical vapour deposition (MOCVD) apparatus. Fabricated heterostructures have been investigated by the selected area XPS depth profiling technique. The measurements have been carried out using optimized Ar+ ion sputtering conditions. The width of the heterointerfaces has been studied after correction of the experimental profiles (In3d5/2, Ga2p3/2 and Auger Ga LMM, In MNN peaks) for the influence of electron escape depth. The linear dependence of depth resolution DELTA(z) on the sputtering depth, caused by sputtering induced surface roughening, is determined from experimental profiles. The initial depth resolution DELTA(z) almost-equal-to 3 nm is degraded to DELTA(z) almost-equal-to 8 nm at depth z almost-equal-to 100 nm. Quantitative depth profiles of the investigated heterointerfaces are derivedusing calibrated elemental sensitivity factors and ion sputtering rates. The results are found to be in good agreement with X-ray diffractometry and transmission electron microscopy data.

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Documento generato il 04/12/20 alle ore 01:06:34