Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
ABRUPT SI GE INTERFACE FORMATION USING ATOMIC-HYDROGEN IN SI MOLECULAR-BEAM EPITAXY
Autore:
OHTA G; FUKATSU S; EBUCHI Y; HATTORI T; USAMI N; SHIRAKI Y;
Indirizzi:
MUSASHI INST TECHNOL,DEPT ELECT & ELECTR ENGN,1-28-1 TAMAZUTSUMI,SETAGAYA KU TOKYO 158 JAPAN UNIV TOKYO,DEPT PURE & APPL SCI,MEGURO KU TOKYO 153 JAPAN UNIV TOKYO,ADV SCI & TECHNOL RES CTR TOKYO 153 JAPAN
Titolo Testata:
Applied physics letters
fascicolo: 23, volume: 65, anno: 1994,
pagine: 2975 - 2977
SICI:
0003-6951(1994)65:23<2975:ASGIFU>2.0.ZU;2-P
Fonte:
ISI
Lingua:
ENG
Soggetto:
SURFACE SEGREGATION; GROWTH; TEMPERATURE; COVERAGE; LAYER;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
16
Recensione:
Indirizzi per estratti:
Citazione:
G. Ohta et al., "ABRUPT SI GE INTERFACE FORMATION USING ATOMIC-HYDROGEN IN SI MOLECULAR-BEAM EPITAXY", Applied physics letters, 65(23), 1994, pp. 2975-2977

Abstract

Compositional abruptness of strained Si/Ge heterointerfaces grown by solid source Si molecular beam epitaxy under supply of atomic hydrogen(AH) was investigated using secondary ion mass spectrometry and reflection high-energy electron diffraction. Systematic variation of growthtemperature and AH exposure pressure revealed that Ge segregation length is a steadily decreasing function of AH coverage on the growth surface. (C) 1994 American Institute of Physics.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 12/07/20 alle ore 08:11:16