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Titolo:
EFFECT OF FACET ROUGHNESS ON ETCHED-FACET SEMICONDUCTOR-LASER DIODES
Autore:
FRANCIS DA; CHANGHASNAIN CJ; EASON K;
Indirizzi:
STANFORD UNIV,EDWARD L GINZTON LAB STANFORD CA 94305
Titolo Testata:
Applied physics letters
fascicolo: 12, volume: 68, anno: 1996,
pagine: 1598 - 1600
SICI:
0003-6951(1996)68:12<1598:EOFROE>2.0.ZU;2-2
Fonte:
ISI
Lingua:
ENG
Soggetto:
SUPERLUMINESCENT DIODES; OPTICAL AMPLIFIERS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
10
Recensione:
Indirizzi per estratti:
Citazione:
D.A. Francis et al., "EFFECT OF FACET ROUGHNESS ON ETCHED-FACET SEMICONDUCTOR-LASER DIODES", Applied physics letters, 68(12), 1996, pp. 1598-1600

Abstract

We calculate the effects of facet roughness on laser performance of etched-facet semiconductor diode lasers. Facet roughness can be caused by the finite pixel size, used in photolithographic mask fabrication, or in the facet etching process. We consider various sizes of roughness and show that appreciable effects can result from roughness levels previously considered optically flat. Far-field shifts and modal coupling caused by facet roughness are also calculated. Results are highly useful for designing lasers with curved or arbitrarily oriented facts such as unstable resonators or beam steering fan laser diodes. (C) 1996American Institute of Physics.

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Documento generato il 04/12/20 alle ore 00:55:20