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Titolo:
LONGITUDINAL MODE CONTROL IN 1.3-MU-M FABRY-PEROT LASERS BY MODE SUPPRESSION
Autore:
KOZLOWSKI DA; YOUNG JS; ENGLAND JMC; PLUMB RGS;
Indirizzi:
UNIV CAMBRIDGE,DEPT ENGN,TRUMPINGTON ST CAMBRIDGE CB2 1PZ ENGLAND UNIV CAMBRIDGE,CAVENDISH LAB,MICROELECTR RES CTR CAMBRIDGE CB3 0HE ENGLAND
Titolo Testata:
IEE proceedings. Optoelectronics
fascicolo: 1, volume: 143, anno: 1996,
pagine: 71 - 76
SICI:
1350-2433(1996)143:1<71:LMCI1F>2.0.ZU;2-P
Fonte:
ISI
Lingua:
ENG
Soggetto:
SEMICONDUCTOR DIODE-LASERS; DFB LASERS; SPONTANEOUS EMISSION; SPECTRAL OUTPUT; SCATTERING;
Keywords:
SEMICONDUCTOR JUNCTION LASERS; LASING MODES; ION BEAM EFFECTS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
19
Recensione:
Indirizzi per estratti:
Citazione:
D.A. Kozlowski et al., "LONGITUDINAL MODE CONTROL IN 1.3-MU-M FABRY-PEROT LASERS BY MODE SUPPRESSION", IEE proceedings. Optoelectronics, 143(1), 1996, pp. 71-76

Abstract

Localised reflections within the lasing filament of Fabry-Perot lasers cause spectral perturbations. Focused Ga+ ion beam etching can be used to form steep walled pits of submicron size in the lasing filament which give rise to localised reflections with minimal rises in threshold current. Control of both position and depth enables one to sculpture the modal envelope so as to form single mode Fabry-Perot lasers with30dB of mode suppression and stable with temperature over 30 degrees C with an increase in threshold current of a few milliamps. The authors also report the appearance of an enhanced single spectral line belowthreshold. Modelling results show that an effective reflectivity can be allocated to the etched pit, and this is an order of magnitude below the cleaved facet reflectivity.

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Documento generato il 13/07/20 alle ore 10:43:45