Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
ANALYSIS OF PLASMA CHEMICAL-REACTIONS IN DRY-ETCHING OF SILICON DIOXIDE
Autore:
KAZUMI H; TAGO K;
Indirizzi:
HITACHI LTD,HITACHI RES LAB,4026 KUJI CHO HITACHI IBARAKI JAPAN HITACHI LTD,ENERGY RES LAB HITACHI IBARAKI 31912 JAPAN
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 4B, volume: 34, anno: 1995,
pagine: 2125 - 2131
SICI:
0021-4922(1995)34:4B<2125:AOPCID>2.0.ZU;2-5
Fonte:
ISI
Lingua:
ENG
Soggetto:
DISCHARGES; ELECTRON;
Keywords:
PLASMA CHEMISTRY; SILICON DIOXIDE; PARTICLE-IN-CELL METHOD; MOLECULAR ORBITAL METHOD; FLUOROCARBON GAS; DISSOCIATION; SELECTIVITY;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
11
Recensione:
Indirizzi per estratti:
Citazione:
H. Kazumi e K. Tago, "ANALYSIS OF PLASMA CHEMICAL-REACTIONS IN DRY-ETCHING OF SILICON DIOXIDE", JPN J A P 1, 34(4B), 1995, pp. 2125-2131

Abstract

A computational model for chemical reactions in plasmas has been developed and applied to the gas-phase chemistry of dry etching of silicondioxide. An ab-initio molecular orbital method is used to determine the dissociation processes and the threshold energies for gases and neutral radicals. Plasma chemistry is calculated by the plasma chemical kinetic method. The chemical compositions of the dry etching plasmas were investigated for fluorocarbon gases. Calculated ion fluxes, electron temperatures, and densities agreed with experimental results within factors of three. The differences in plasma characteristics between CHF3/CH2F2 and C4F8 were attributed to differences in the products and threshold energies of the dissociation reactions. Correlations could befound between the composition of radicals in a plasma and the etch selectivity in C4F8.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 28/11/20 alle ore 15:49:21