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Titolo:
FORMATION OF A CRYSTALLINE METAL-RICH SILICIDE IN THIN-FILM TITANIUM SILICON REACTIONS/
Autore:
CLEVENGER LA; CABRAL C; ROY RA; LAVOIE C; JORDANSWEET J; BRAUER S; MORALES G; LUDWIG KF; STEPHENSON GB;
Indirizzi:
IBM CORP,THOMAS J WATSON RES CTR YORKTOWN HTS NY 10598 BOSTON UNIV,DEPT PHYS BOSTON MA 02215
Titolo Testata:
Thin solid films
fascicolo: 1-2, volume: 289, anno: 1996,
pagine: 220 - 226
SICI:
0040-6090(1996)289:1-2<220:FOACMS>2.0.ZU;2-9
Fonte:
ISI
Lingua:
ENG
Soggetto:
PHASE-TRANSFORMATION; X-RAY; DISILICIDE; SI;
Keywords:
ELECTRONIC DEVICES; SILICIDES; TITANIUM; X-RAY DIFFRACTION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
27
Recensione:
Indirizzi per estratti:
Citazione:
L.A. Clevenger et al., "FORMATION OF A CRYSTALLINE METAL-RICH SILICIDE IN THIN-FILM TITANIUM SILICON REACTIONS/", Thin solid films, 289(1-2), 1996, pp. 220-226

Abstract

In-situ X-ray diffraction during rapid thermal annealing at rates from 3 to 20 degrees C s(-1) was used to study the formation of titanium silicide phases from a thin film of Ti and doped single-crystal or undoped polycrystalline silicon substrates. In all cases, a metal-rich silicide (identified as either Ti5Si4 or Ti5Si3) was the first crystalline phase to form between 500 and 550 degrees C, followed by C49-TiSi2 between 575 and 600 degrees C. The formation of C49-TiSi2 completely consumed the metal-rich silicide before transforming into the low-resistance C54-TiSi2 phase at approximately 800 degrees C. These results indicate that while there is sufficient thermodynamic driving forces to nucleate both a metal-rich silicide and C49-TiSi2 the subsequent growth of C49-TiSi2 is kinetically favored over the growth of Ti5Si4 or Ti5Si3.

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Documento generato il 19/09/20 alle ore 15:07:06