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Titolo:
THE IMPACT OF NITROGEN IMPLANTATION INTO HIGHLY DOPED POLYSILICON GATES FOR HIGHLY RELIABLE AND HIGH-PERFORMANCE SUB-QUARTER-MICRON DUAL-GATE COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR
Autore:
KUROI T; KOBAYASHI M; SHIRAHATA M; OKUMURA Y; KUSUNOKI S; INUISHI M; TSUBOUCHI N;
Indirizzi:
MITSUBISHI ELECTR CORP,ULTRA LARGE SCALE INTEGRAT LAB,4-1 MIZUHARA ITAMI HYOGO 664 JAPAN
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 2B, volume: 34, anno: 1995,
pagine: 771 - 775
SICI:
0021-4922(1995)34:2B<771:TIONII>2.0.ZU;2-#
Fonte:
ISI
Lingua:
ENG
Keywords:
SILICON; CMOS; DUAL-GATE STRUCTURE; NITROGEN ION IMPLANTATION; HOT CARRIER; NITRIDED OXIDE; OXIDE RELIABILITY; BORON PENETRATION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
13
Recensione:
Indirizzi per estratti:
Citazione:
T. Kuroi et al., "THE IMPACT OF NITROGEN IMPLANTATION INTO HIGHLY DOPED POLYSILICON GATES FOR HIGHLY RELIABLE AND HIGH-PERFORMANCE SUB-QUARTER-MICRON DUAL-GATE COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR", JPN J A P 1, 34(2B), 1995, pp. 771-775

Abstract

We studied the effects of nitrogen implantation into highly doped polysilicon gates in detail. It was found that highly arsenic-doped polysilicon gates caused degradation of gate oxide films and highly boron-doped polysilicon gates resulted in a shift of threshold voltage by boron penetration. Nitrogen implantation into polysilicon gates can effectively overcome these problems. The nitrogen implanted into the polysilicon gate is segregated into the gate oxide film during heat treatment after implantation. The nitrogen in the gate oxide film can act as abarrier layer for boron penetration and reduce the random failures ofgate oxide films under highly doped polysilicon gates. Moreover, the hot carrier resistance can also be improved by nitrogen implantation. Highly reliable and high-performance dual-gate Complementary metal oxide semiconductor (CMOS) can be realized by the highly doped gate and the nitrogen implantation technique.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 02/12/20 alle ore 18:27:36