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Titolo:
TRACING THE CHANGING ENVIRONMENT OF LATTICE SITES IN THE RECRYSTALLIZATION OF AMORPHISED SILICON
Autore:
DENT AJ; GREAVES GN; DERST G; KALBITZER S; MULLER G;
Indirizzi:
DARESBURY LAB,DRAL WARRINGTON WA4 4AD CHESHIRE ENGLAND MAX PLANCK INST KERNPHYS D-69117 HEIDELBERG GERMANY DAIMLER BENZ AG D-81663 MUNICH GERMANY
Titolo Testata:
Physica. B, Condensed matter
fascicolo: 1-4, volume: 209, anno: 1995,
pagine: 503 - 505
SICI:
0921-4526(1995)209:1-4<503:TTCEOL>2.0.ZU;2-N
Fonte:
ISI
Lingua:
ENG
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
6
Recensione:
Indirizzi per estratti:
Citazione:
A.J. Dent et al., "TRACING THE CHANGING ENVIRONMENT OF LATTICE SITES IN THE RECRYSTALLIZATION OF AMORPHISED SILICON", Physica. B, Condensed matter, 209(1-4), 1995, pp. 503-505

Abstract

Using RefleXAFS measurements at the Si K-edge changes in the environment of the lattice constituent in ion beam amorphised silicon at various stages of annealing have been recorded. The recrystallisation of the Si matrix was identified by the emergence of the second and third shell of the diamond structure, which were fully established by 625 degrees C, consistent with RBS channeling results. Compared to this, earlier results on dopants (As, Ga) in similar substrate material showed that recrystallisation around these sites was incomplete even at 900 degrees C.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 27/09/20 alle ore 19:40:26