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Titolo:
LEAKAGE CURRENT ANALYSIS FOR INYGA1-YPZAS1-Z ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS/
Autore:
LAN S; CHAN YC; XU WJ; CUI DL; YANG CQ; LIU HD;
Indirizzi:
NANYANG TECHNOL UNIV,SCH ELECT & ELECT ENGN SINGAPORE 639798 SINGAPORE BEIJING UNIV,DEPT PHYS,NATL LAB MESOSCOP PHYS BEIJING 100871 PEOPLES R CHINA
Titolo Testata:
Journal of applied physics
fascicolo: 11, volume: 80, anno: 1996,
pagine: 6355 - 6359
SICI:
0021-8979(1996)80:11<6355:LCAFIA>2.0.ZU;2-7
Fonte:
ISI
Lingua:
ENG
Soggetto:
HETEROJUNCTION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
13
Recensione:
Indirizzi per estratti:
Citazione:
S. Lan et al., "LEAKAGE CURRENT ANALYSIS FOR INYGA1-YPZAS1-Z ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS/", Journal of applied physics, 80(11), 1996, pp. 6355-6359

Abstract

A band offset diagram for the heterojunction InyGa1-yPzAs1-z/AlxGa1-xAs based on the transitivity rule and our measured band offset for In0.5Ga0.5P/GaAs is given. A carrier leakage analysis is developed and explains the experimental observations in 670 nm visible InyGa1-yPzAs1-z/AlxGa1-xAs double heterostructure (DH) lasers. The analysis based on the performance of this laser verifies that our band offset is more accurate than previous values. In contrast to GaAs/AlxGa1-xAs, InGaPAs/InP and InGaP/AlGaInP DH lasers, we found that the leakage of holes, rather than of electrons, is responsible for the high threshold current density of this type of laser. (C) 1996 American Institute of Physics.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 10/07/20 alle ore 02:02:18