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Titolo:
SUPPRESSION OF [100]DARK-LINE DEFECT GROWTH IN ALGAAS INGAAS SINGLE-QUANTUM-WELL LASERS GROWN ON SI SUBSTRATES/
Autore:
HASEGAWA Y; EGAWA T; JIMBO T; UMENO M;
Indirizzi:
MATSUSHITA ELECT IND CO LTD,SEMICOND RES CTR,3-1-1 YAGUMONAKAMACHI MORIGUCHI OSAKA 570 JAPAN NAGOYA INST TECHNOL,DEPT ELECT & COMP ENGN,SHOWA KU NAGOYA AICHI 466 JAPAN NAGOYA INST TECHNOL,MICROSTRUCT DEVICES RES CTR,SHOWA KU NAGOYA AICHI466 JAPAN
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 11, volume: 35, anno: 1996,
pagine: 5637 - 5641
SICI:
0021-4922(1996)35:11<5637:SO[DGI>2.0.ZU;2-6
Fonte:
ISI
Lingua:
ENG
Soggetto:
SEMICONDUCTOR DIODE-LASERS; CHEMICAL-VAPOR-DEPOSITION; HETEROSTRUCTURE LASERS; POLARIZATION; DISLOCATION; LAYER; MECHANISM; OPERATION; SILICON;
Keywords:
DARK-LINE DEFECT; ALGAAS/INGAAS LASER ON SI; DISLOCATION PINNING; STRESS; RAPID DEGRADATION; ELECTROLUMINESCENCE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
20
Recensione:
Indirizzi per estratti:
Citazione:
Y. Hasegawa et al., "SUPPRESSION OF [100]DARK-LINE DEFECT GROWTH IN ALGAAS INGAAS SINGLE-QUANTUM-WELL LASERS GROWN ON SI SUBSTRATES/", JPN J A P 1, 35(11), 1996, pp. 5637-5641

Abstract

We report the suppression of [100] dark-line defect growth in AlGaAs/InxGa1-xAs quantum well lasers on Si substrates grown by metalorganic chemical vapor deposition. An AlGaAs/In-0.02 Ga0.98As laser on Si withan In0.08Ga0.92As intermediate layer (InGaAs IL) has a stress-relieved active layer, while an AlGaAs/In0.07Ga0.93As laser on Si with an InGaAs IL has a compressive-stress induced active layer. The AlGaAs/In0.07Ga0.93As laser had a higher threshold current density than the AlGaAs/In0.02Ga0.98As laser due to the increased bending of the threading dislocations in the active layer. The lifetimes of these lasers at 300 Kwere markedly increased, due to the reduction in the dark spot density resulting from the introduction of the InGaAs IL and the reduction in the (100) dark-line defect growth velocity resulting from the dislocation pinning in the InGaAs active layer.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 14/07/20 alle ore 10:09:18