Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
TITANIUM-HYDROGEN DEFECTS IN SILICON
Autore:
JOST W; WEBER J;
Indirizzi:
MAX PLANCK INST FESTKORPERFORSCH,POSTFACH 800665 D-70506 STUTTGART GERMANY
Titolo Testata:
Physical review. B, Condensed matter
fascicolo: 16, volume: 54, anno: 1996,
pagine: 11038 - 11041
SICI:
0163-1829(1996)54:16<11038:TDIS>2.0.ZU;2-N
Fonte:
ISI
Lingua:
ENG
Soggetto:
LEVEL TRANSIENT SPECTROSCOPY; MONATOMIC HYDROGEN; INVERTED ORDER; DONOR LEVELS; ACCEPTOR; PAIRS; SI;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
15
Recensione:
Indirizzi per estratti:
Citazione:
W. Jost e J. Weber, "TITANIUM-HYDROGEN DEFECTS IN SILICON", Physical review. B, Condensed matter, 54(16), 1996, pp. 11038-11041

Abstract

Several titanium-hydrogen (TiH) complexes are generated in crystalline Si by wet chemical etching or a remote hydrogen plasma treatment. Weidentify two electrically active (E(C)-0.31 eV, E(C)-0.57 eV) and oneelectrically inactive TiH complex. The passive TiH complex dissociates at temperatures above 570 K, leading to an increase in the interstitial Ti concentration.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 16/07/20 alle ore 05:37:27