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Titolo:
EVOLUTION OF SURFACE-MORPHOLOGY DURING GROWTH AND ION EROSION OF THIN-FILMS
Autore:
SCHLATMANN R; SHINDLER JD; VERHOEVEN J;
Indirizzi:
STICHING FUNDAMENTEEL ONDERZOEK MAT INST ATOM & M,KRUISLAAN 407 NL-1098 SJ AMSTERDAM NETHERLANDS
Titolo Testata:
Physical review. B, Condensed matter
fascicolo: 15, volume: 54, anno: 1996,
pagine: 10880 - 10889
SICI:
0163-1829(1996)54:15<10880:EOSDGA>2.0.ZU;2-K
Fonte:
ISI
Lingua:
ENG
Soggetto:
X-RAY-SCATTERING; INTERFACIAL ROUGHNESS; MULTILAYER STRUCTURES; ROUGHENING INSTABILITY; SIO2 SURFACES; BOMBARDMENT; MIRRORS; REFLECTIVITY; FLUCTUATIONS; DIFFRACTION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
44
Recensione:
Indirizzi per estratti:
Citazione:
R. Schlatmann et al., "EVOLUTION OF SURFACE-MORPHOLOGY DURING GROWTH AND ION EROSION OF THIN-FILMS", Physical review. B, Condensed matter, 54(15), 1996, pp. 10880-10889

Abstract

A model is presented to describe the evolution of thin-film surface morphology during growth and ion erosion. Characteristic in-plane length scales and overall amplitude of the roughness are studied as a function of certain competing roughening and smoothing mechanisms. Particular attention is paid to the deposition method of growth followed by ion erosion of an excess layer thickness. The model is extended to the case of multilayers, to include roughness correlations between different interfaces. Specular and diffuse x-ray-scattering measurements on Mo/Si multilayers are interpreted in terms of the model. Quantitative agreement between the model and the experimental data can be obtained ifwe assume viscous how to be the dominant smoothing mechanism during ion erosion of the Si layers.

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Documento generato il 27/11/20 alle ore 02:13:09