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Titolo:
INTERFACE ABRUPTNESS IN STRAINED III-V HETEROSTRUCTURES
Autore:
BRUNI MR; KACIULIS S; MATTOGNO G; RIGHINI G;
Indirizzi:
CNR,IST CHIM MAT,POB 10 I-00016 MONTEROTONDO ITALY CNR,IST CHIM MAT I-00016 MONTEROTONDO ITALY
Titolo Testata:
Applied surface science
, volume: 104, anno: 1996,
pagine: 652 - 655
SICI:
0169-4332(1996)104:<652:IAISIH>2.0.ZU;2-M
Fonte:
ISI
Lingua:
ENG
Soggetto:
MOLECULAR-BEAM EPITAXY; SURFACE SEGREGATION; INXGA1-XAS/GAAS SUPERLATTICE; QUANTUM-WELLS; INAS LAYERS; ALLOYS; GROWTH; INP;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
19
Recensione:
Indirizzi per estratti:
Citazione:
M.R. Bruni et al., "INTERFACE ABRUPTNESS IN STRAINED III-V HETEROSTRUCTURES", Applied surface science, 104, 1996, pp. 652-655

Abstract

Highly strained In0.53Ga0.47As/InAs/In0.53Ga0.47As heterostructures and InAs layers were grown on InP (100) substrates by using molecular beam epitaxy (MBE). The samples have been investigated by means of selected-area X-ray spectroscopy (SAXPS) combined with low energy ion sputtering. The heterointerface widths in the In0.53Ga0.47As/InAs/In0.53Ga0.47As samples grown under diverse MBE conditions (standard and virtual surfactant) have been analysed, The thickness of the ternary sublayer formed between the InAs and InP substrate has been studied in the samples deoxidized under the flux of arsenic (AsH3) or phosphorus (PH3). The suitability of SAXPS depth profiling technique for the qualitative characterization of ultra-thin heterostructures is discussed considering the limitations of experimental depth resolution.

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Documento generato il 04/12/20 alle ore 06:49:48