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Titolo:
MEASUREMENTS OF THE ENERGY-BAND OFFSETS OF SI1-XGEX SI AND GE1-YCY/GEHETEROJUNCTIONS/
Autore:
CHEN F; WAITE MM; SHAH SI; ORNER BA; IYER SS; KOLODZEY J;
Indirizzi:
UNIV DELAWARE,DEPT ELECT ENGN,140 EVANS HALL NEWARK DE 19716 UNIV DELAWARE,DEPT PHYS NEWARK DE 19716 DUPONT CO INC WILMINGTON DE 19880 SIBAND LLC INC HOPEWELL JCT NY 12533
Titolo Testata:
Applied surface science
, volume: 104, anno: 1996,
pagine: 615 - 620
SICI:
0169-4332(1996)104:<615:MOTEOO>2.0.ZU;2-Q
Fonte:
ISI
Lingua:
ENG
Soggetto:
SEMICONDUCTORS; INTERFACES; ALLOYS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
19
Recensione:
Indirizzi per estratti:
Citazione:
F. Chen et al., "MEASUREMENTS OF THE ENERGY-BAND OFFSETS OF SI1-XGEX SI AND GE1-YCY/GEHETEROJUNCTIONS/", Applied surface science, 104, 1996, pp. 615-620

Abstract

Discontinuities in the energies of the conduction and valence bands at semiconductor heterojunctions are important parameters for device design. We describe experiments using X-ray photoelectron spectroscopy with measurements of valence-band energies with respect to core-levels of metastable, coherently strained Si1-xGex alloy layers and of thick Ge1-yCy alloy layers. For strained Si1-xGex alloys on Si, we have found that the valence band offset increased with the Ge fraction x with most of the offset in the valence band, We obtained a valence band offset of 0.22 eV for x = 0.23, in good agreement with theoretical calculations. For Ge1-yCy alloys, we found very Little shift in the valence band energies with the C fraction y, Since the optical bandgap of GeC increased with the C fraction y, most of the offset for Ge1-yCy/Ge heterojunction was in the conduction band, Based on the measurements of the energy band offsets of Si1-xGex/Si, we infer that the major portion of bandgap discontinuity of Ge1-yCy on Si is in the valence band, Ge1-yCy alloys are new metastable materials that open up a new region for group IV heterostructures.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 05/07/20 alle ore 22:25:46