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Titolo:
HRTEM STUDY OF ALN FORMED BY NITROGEN IMPLANTATION IN AL FILMS
Autore:
SEGHROUCHNI Z; ELCHAHAL L; MOSSER A; EHRET G;
Indirizzi:
IPCMS,GSI,CNRS,UMR 046,23 RUE LOESS F-67037 STRASBOURG FRANCE
Titolo Testata:
Microscopy microanalysis microstructures
fascicolo: 3, volume: 7, anno: 1996,
pagine: 195 - 204
SICI:
1154-2799(1996)7:3<195:HSOAFB>2.0.ZU;2-R
Fonte:
ISI
Lingua:
ENG
Soggetto:
PHASE-TRANSFORMATIONS; ALUMINUM NITRIDE; THIN-FILMS; BOMBARDMENT; IONS; AIN;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
12
Recensione:
Indirizzi per estratti:
Citazione:
Z. Seghrouchni et al., "HRTEM STUDY OF ALN FORMED BY NITROGEN IMPLANTATION IN AL FILMS", Microscopy microanalysis microstructures, 7(3), 1996, pp. 195-204

Abstract

Aluminum thin films (70 nm thick) deposited on a copper grid and thennitrogen implanted at 20 keV with doses of 1 x 10(17), 2 x 10(17) and3 x 10(17) N+/cm(2) are analyzed by HRTEM techniques. At low dose (1 x 10(17) N+/cm(2)), it is shown that the cubic phase is preponderant, while small AIN particles with hcp wurtzite-type (<10(1)over bar0>) planes are present in the vicinity of grains of more important size withcubic structure and ill-defined morphology. When increasing the dose up to 3 x 10(17) N+/cm(2), AlN particles grow into faceted crystallites (15-30 nm size) with [0001], [(1) over bar 102] and [<(1)over bar100>] preferred orientation, while the fee structure of some ill-defined grains transforms to hcp. Besides, an EDS study, on both parallel and cross sections, was realized in order to localize nitrogen and to quantify N/Al ratios.

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Documento generato il 02/12/20 alle ore 05:21:42