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Titolo:
OBSERVATION OF THE HUYGENS-PRINCIPLE GROWTH-MECHANISM IN SPUTTERED W SI MULTILAYERS/
Autore:
SALDITT T; LOTT D; METZGER TH; PEISL J; FISCHER R; ZWECK J; HOGHOJ P; SCHARPF O; VIGNAUD G;
Indirizzi:
UNIV MUNICH,SEKT PHYS,GESCHWISTER SCHOLL PL 1 D-80539 MUNICH GERMANY UNIV REGENSBURG,INST PHYS EXPT D-93040 REGENSBURG GERMANY INST MAX VON LAUE PAUL LANGEVIN F-38043 GRENOBLE FRANCE EUROPEAN SYNCHROTRON RADIAT FACIL F-38043 GRENOBLE FRANCE
Titolo Testata:
Europhysics letters
fascicolo: 8, volume: 36, anno: 1996,
pagine: 565 - 570
SICI:
0295-5075(1996)36:8<565:OOTHGI>2.0.ZU;2-C
Fonte:
ISI
Lingua:
ENG
Soggetto:
THIN-FILM; SCATTERING; ROUGHNESS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
15
Recensione:
Indirizzi per estratti:
Citazione:
T. Salditt et al., "OBSERVATION OF THE HUYGENS-PRINCIPLE GROWTH-MECHANISM IN SPUTTERED W SI MULTILAYERS/", Europhysics letters, 36(8), 1996, pp. 565-570

Abstract

We have investigated the interfacial roughness of a W/Si multilayer sputtered at high Ar gas pressure. The roughness exponents as determined from diffuse X-ray scattering agree well with the Huygens-principle growth model proposed by Tang, Alexander and Bruinsma (TAB). Simple microscopic explanations are given to account for the finding of Edwards-Wilkinson (EW) type growth at low Ar pressure and the TAB growth mechanism at high pressures, as well as for the absence of any scaling according to the Kardar-Parisi-Zhang (KPZ) equation.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 29/09/20 alle ore 20:24:48