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Titolo:
NONLINEAR-OPTICAL INVESTIGATIONS OF THE DYNAMICS OF HYDROGEN INTERACTION WITH SILICON SURFACES
Autore:
HOFER U;
Indirizzi:
MAX PLANCK INST QUANTUM OPT,HANS KOPFERMANN STR 1 D-85740 GARCHING GERMANY
Titolo Testata:
Applied physics A: Materials science & processing
fascicolo: 6, volume: 63, anno: 1996,
pagine: 533 - 547
SICI:
0947-8396(1996)63:6<533:NIOTDO>2.0.ZU;2-P
Fonte:
ISI
Lingua:
ENG
Soggetto:
TEMPERATURE-PROGRAMMED DESORPTION; INTERNAL-STATE DISTRIBUTIONS; PHONON-ASSISTED STICKING; PHASE-SPACE THEORY; PI-BONDED DIMERS; SI(100)-2X1 SURFACE; MOLECULAR-HYDROGEN; ATOMIC-HYDROGEN; H-2 DESORPTION; MONOHYDRIDE PHASE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
94
Recensione:
Indirizzi per estratti:
Citazione:
U. Hofer, "NONLINEAR-OPTICAL INVESTIGATIONS OF THE DYNAMICS OF HYDROGEN INTERACTION WITH SILICON SURFACES", Applied physics A: Materials science & processing, 63(6), 1996, pp. 533-547

Abstract

Optical second-harmonic generation (SHG) from silicon surfaces may beresonantly enhanced by dangling-bond-derived surface states. The resulting high sensitivity to hydrogen adsorption combined with unique features of SHG as an optical probe has been exploited to study various kinetical and dynamical aspects of the adsorption system H-2/Si. Studies of surface diffusion of H/Si(111)7x7 and recombinative desorption ofhydrogen from Si(111)7x7 and Si(100)2x1 revealed that the covalent nature of hydrogen bonding on silicon surfaces leads to high diffusion barriers and to desorption kinetics that strongly depend on the surfacestructure. Recently, dissociative adsorption of molecular hydrogen onSi(100)2x1 and Si(111)7x7 could be observed for the first time by heating the surfaces to temperatures between 550 K and 1050 K and monitoring the SH response during exposure to a high flux of H-2 or D-2. The measured initial sticking coefficients for a gas temperature of 300 K range from 10(-9) to 10(-5) and strongly increase as a function of surface temperature. These results demonstrate that the lattice degrees of freedom may play a decisive role in the reaction dynamics on semiconductor surfaces.

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Documento generato il 02/12/20 alle ore 18:29:48