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Titolo:
SIMULTANEOUS AND INDEPENDENT SEMICONDUCTOR-LASER OPERATION AT 1.3 AND1.55 MU-M PRODUCED BY FOCUSED ION-BEAM ETCHING
Autore:
GARDINER CK; KOZLOWSKI DA; ENGLAND JMC; PLUMB RGS;
Indirizzi:
UNIV CAMBRIDGE,DEPT ENGN,TRUMPINGTON ST CAMBRIDGE CB2 1PZ ENGLAND UNIV CAMBRIDGE,CAVENDISH LAB,MICROELECT RES CTR CAMBRIDGE CB3 0HE ENGLAND
Titolo Testata:
Electronics Letters
fascicolo: 20, volume: 32, anno: 1996,
pagine: 1891 - 1892
SICI:
0013-5194(1996)32:20<1891:SAISOA>2.0.ZU;2-I
Fonte:
ISI
Lingua:
ENG
Soggetto:
FABRY-PEROT LASERS; MODE SUPPRESSION; 1.3-MU-M;
Keywords:
ETCHING; ION BEAM EFFECTS; LASER MODES; SEMICONDUCTOR JUNCTION LASERS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
3
Recensione:
Indirizzi per estratti:
Citazione:
C.K. Gardiner et al., "SIMULTANEOUS AND INDEPENDENT SEMICONDUCTOR-LASER OPERATION AT 1.3 AND1.55 MU-M PRODUCED BY FOCUSED ION-BEAM ETCHING", Electronics Letters, 32(20), 1996, pp. 1891-1892

Abstract

The authors show that, by introducing a single focused ion beam etched cavity into the 1.3 mu m bandgap material between the phase tuning and sampled grating sections of a three section DBR laser, sufficient feedback is produced to enable stimulated emission at 1.3, as well as 1.55 mu m. The etched cavity also increases the intercontact resistance.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 16/07/20 alle ore 16:13:38