Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
CONSIDERING THE DEPENDENCE OF THE LIGHT-INDUCED EFFECT ON CARBON CONTENT IN BORON-DOPED AMORPHOUS SILICON-CARBON
Autore:
ISOMURA M; TANAKA M; TSUDA S;
Indirizzi:
SANYO ELECT CO LTD,NEW MAT RES CTR,1-18-13 HASKIRIDANI HIRAKATA OSAKA579 JAPAN
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 9A, volume: 35, anno: 1996,
pagine: 4626 - 4627
SICI:
0021-4922(1996)35:9A<4626:CTDOTL>2.0.ZU;2-M
Fonte:
ISI
Lingua:
ENG
Soggetto:
FILMS;
Keywords:
AMORPHOUS SILICON; CARBON; BORON; STAEBLER-WRONSKI EFFECT; RELAXATION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
8
Recensione:
Indirizzi per estratti:
Citazione:
M. Isomura et al., "CONSIDERING THE DEPENDENCE OF THE LIGHT-INDUCED EFFECT ON CARBON CONTENT IN BORON-DOPED AMORPHOUS SILICON-CARBON", JPN J A P 1, 35(9A), 1996, pp. 4626-4627

Abstract

The inverse Staebler-Wronski effect is observed in boron-doped amorphous silicon (a-Si:H), in which the dark conductivity increases with prolonged light-soaking and recovers with thermal annealing. This effectis suppressed by the incorporation of carbon, and the conventional Staebler-Wronski effect is observed in boron-doped amorphous silicon-carbon (a-SiC:H) with a high carbon content. It is found that the dependence on carbon content is due to the variation of the inverse effect. The inverse effect in a-Si:H shows significant recovery to the initial state even at room temperature, but the conventional effect in a-SiC:His stable near room temperature. The conventional effect in p-type a-SiC:H is probably similar to that in intrinsic a-Si:H but the inverse effect in p-type a-Si:H has a different mechanism, such as unstable boron activation.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 05/12/20 alle ore 03:38:38