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Titolo:
POSTIMPLANTATION OF IONS INTO AMORPHOUS-CARBON FILMS
Autore:
KOLITSCH A; SUMMCHEN L; ULLMANN J; FALKE U; HEGER P;
Indirizzi:
ROSSENDORF INC,RES CTR,INST ION BEAM PHYS & MAT RES,POB 510119 D-01314 DRESDEN GERMANY TECH UNIV DRESDEN,INST ANALYT CHEM D-01069 DRESDEN GERMANY TECH UNIV CHEMNITZ ZWICKOU,INST PHYS D-09126 CHEMNITZ GERMANY
Titolo Testata:
Surface & coatings technology
fascicolo: 1-3, volume: 84, anno: 1996,
pagine: 495 - 499
SICI:
0257-8972(1996)84:1-3<495:POIIAF>2.0.ZU;2-3
Fonte:
ISI
Lingua:
ENG
Soggetto:
RAMAN;
Keywords:
ION IMPLANTATION; AMORPHOUS CARBON; ELECTRON ENERGY LOSS SPECTROSCOPY; RAMAN SPECTROSCOPY;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
16
Recensione:
Indirizzi per estratti:
Citazione:
A. Kolitsch et al., "POSTIMPLANTATION OF IONS INTO AMORPHOUS-CARBON FILMS", Surface & coatings technology, 84(1-3), 1996, pp. 495-499

Abstract

Hard amorphous carbon films were prepared by ion-beam- assisted evaporation on silicon wafers. The effect of post-implantation (20 keV, 200keV) with film-forming carbon species and non-film-forming inert neonions was studied as a function of the implanted fluence. In order to establish ion-induced changes in the mechanical and structural properties, the as-deposited and post-implanted films were characterized by ultramicrohardness measurements, Raman spectroscopy and electron energyloss spectroscopy. A significant improvement of the hardness was found, correlated with sp(2) to sp(3) transformation, by implantation of 20 keV carbon ions.

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Documento generato il 27/09/20 alle ore 00:18:58