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Titolo:
SNMS CHARACTERIZATION OF ION-IRRADIATED GAAS-SURFACES
Autore:
SCANDURRA A; LICCIARDELLO A; TORRISI A; WEIGERT R; PUGLISI O;
Indirizzi:
SGS THOMSON MICROELECT,SUPERLAB,LAB SUPERFICI & INTERFASI,STR PRIMOSOLE 50 I-95121 CATANIA ITALY CONSORZIO CATANIA RIC I-95125 CATANIA ITALY UNIV CATANIA,DIPARTIMENTO SCI CHIM I-95125 CATANIA ITALY
Titolo Testata:
Applied surface science
fascicolo: 1, volume: 103, anno: 1996,
pagine: 19 - 25
SICI:
0169-4332(1996)103:1<19:SCOIG>2.0.ZU;2-#
Fonte:
ISI
Lingua:
ENG
Soggetto:
ENERGY; SPECTROSCOPY; BOMBARDMENT;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
16
Recensione:
Indirizzi per estratti:
Citazione:
A. Scandurra et al., "SNMS CHARACTERIZATION OF ION-IRRADIATED GAAS-SURFACES", Applied surface science, 103(1), 1996, pp. 19-25

Abstract

This study deals with the phenomena that influence the relative intensity of the sputtered neutral yields when altered layers of GaAs are analysed by using sputtered neutral mass spectrometry (SNMS) technique. The altered layers were obtained by irradiation with He+, Ne+, Ar+, Kr+, Xe+ and O-2(+) ions of various energies, in order to explore different nuclear stopping power regimes. The main result is a considerablechange both of the absolute and relative yields of As and Ga as a function of the bombarding time, type and energy of primary ions. The absolute variation in the sputtered neutral signal is probably related with the amorphization of the outer layers. The relative variation in the yield of As with respect to Ga is not due to true preferential sputtering but to surface segregation followed by removal of the segregatedspecies during the bombardment.

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Documento generato il 21/09/20 alle ore 15:40:48