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Titolo:
EXCESS POLARIZATION OF THE SPONTANEOUS EMISSION IN LASER HETEROSTRUCTURES
Autore:
PTASHCHENKO AA; PTASHCHENKO FA;
Indirizzi:
ODESSA II MECHNIKOV STATE UNIV,STR PETRA VELIKOGO 2 UA-270100 ODESSA UKRAINE
Titolo Testata:
Solid-state electronics
fascicolo: 10, volume: 39, anno: 1996,
pagine: 1495 - 1500
SICI:
0038-1101(1996)39:10<1495:EPOTSE>2.0.ZU;2-I
Fonte:
ISI
Lingua:
ENG
Soggetto:
SEMICONDUCTOR DIODE-LASERS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
23
Recensione:
Indirizzi per estratti:
Citazione:
A.A. Ptashchenko e F.A. Ptashchenko, "EXCESS POLARIZATION OF THE SPONTANEOUS EMISSION IN LASER HETEROSTRUCTURES", Solid-state electronics, 39(10), 1996, pp. 1495-1500

Abstract

''Excess'' polarization of the spontaneous emission (EPSE) of diode lasers at low injection levels, being more pronounced in degraded specimens, has been observed. A model of EPSE is proposed, involving tunnelradiative recombination of electrons and light holes at inhomogeneities of the p-n junction. Separating EPSE from the polarization effect caused by elastic deformation enables the strain in the active region of laser heterostructures to be determined. Copyright (C) 1996 ElsevierScience Ltd

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 13/07/20 alle ore 11:06:40