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Titolo:
ON THE RECOMBINATION BEHAVIOR OF IRON IN MODERATELY BORON-DOPED P-TYPE SILICON
Autore:
WALZ D; JOLY JP; KAMARINOS G;
Indirizzi:
CEA TECHNOL AVANCEES,LETI,MEL,CENG,17 RUE MARTYRS F-38054 GRENOBLE 9 FRANCE ENSERG,LPCS F-38016 GRENOBLE 1 FRANCE
Titolo Testata:
Applied physics A: Materials science & processing
fascicolo: 4, volume: 62, anno: 1996,
pagine: 345 - 353
SICI:
0947-8396(1996)62:4<345:OTRBOI>2.0.ZU;2-C
Fonte:
ISI
Lingua:
ENG
Soggetto:
DISSOCIATION; TEMPERATURE; WAFERS; LEVEL;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
35
Recensione:
Indirizzi per estratti:
Citazione:
D. Walz et al., "ON THE RECOMBINATION BEHAVIOR OF IRON IN MODERATELY BORON-DOPED P-TYPE SILICON", Applied physics A: Materials science & processing, 62(4), 1996, pp. 345-353

Abstract

The recombination lifetime and diffusion length of intentionally iron-contaminated samples were measured by the Surface Photo Voltage (SPV)and the Elymat technique. The lifetime results from these techniques for intentionally iron-contaminated samples were analysed, in particular for the aspect of the injection-level dependency of recombination lifetime. Based on theoretical considerations, a method for the analysis of deep-level parameters combining constant photon flux SPV and Elymat measurements has been developed. This method is based on a detailednumerical analysis of the Elymat technique, including the Dember electric field, the characteristics of the laser beam, the transport parameters of the semiconductor and multilevel Shockley-Read-Hall (SRH) recombination kinetics. The results of the numerical simulation are applied to the analysis of recombination lifetime measurements on intentionally iron-contaminated samples. We compared numerical simulations and experimental results from SPV and Elymat for p-type samples using the classical acceptor level at E(v) +0.1 eV and the donor level of FeB pairs at E(C) -0.3 eV as recombination centre. Better consistency in theinterpretation of the results has been found in the doping range 10(14)-10(16) cm(-3) supposing the E(c) -0.3 eV level as predominant recombination centre. An attempt to extract the electron and hole capture cross-sections for this defect is made.

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Documento generato il 07/08/20 alle ore 21:01:17