Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
DOPANT DEFECT INTERACTIONS IN HYDROGEN-FREE AMORPHOUS-SILICON
Autore:
MULLER G; HELLMICH W; KROTZ G; KALBITZER S; GREAVES GN; DERST G; DENT AJ; DOBSON BR;
Indirizzi:
DAIMLER BENZ AG,FORSCH & TECH,POSTFACH 80 04 65 D-81366 MUNICH GERMANY MAX PLANCK INST KERNPHYS D-69029 HEIDELBERG GERMANY DARESBURY LAB WARRINGTON WA4 4AD CHESHIRE ENGLAND
Titolo Testata:
Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic
fascicolo: 2, volume: 73, anno: 1996,
pagine: 245 - 259
SICI:
1364-2812(1996)73:2<245:DDIIHA>2.0.ZU;2-Y
Fonte:
ISI
Lingua:
ENG
Soggetto:
STRUCTURAL RELAXATION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
33
Recensione:
Indirizzi per estratti:
Citazione:
G. Muller et al., "DOPANT DEFECT INTERACTIONS IN HYDROGEN-FREE AMORPHOUS-SILICON", Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic, 73(2), 1996, pp. 245-259

Abstract

Substitutional (B, P, As and Ga) and interstitial(K) dopants have been incorporated into H-free amorphous Si (a-Si) films produced by ion beam amorphization of crystalline silicon material. X-ray absorption fine-structure, photothermal deflection spectroscopy and electronic transport measurements have been performed on these films to monitor the annealing-induced ordering phenomena around the implanted dopant impurity sites. We find that, in thermally relaxed a-Si, substitutional dopant impurities have a strong tendency to enter the Si random network inthe form of threefold-coordinated, electrically inactive, alloying sites. It is shown that the bonding constraints associated with these sites retard the structural relaxation process of the a-Si films and thecrystallization of the a-Si network in the immediate neighbourhood ofthese sites. In agreement with previous work, we find that high-defect-density a-Si films can be electrically doped with interstitial K impurities. In such interstitially doped material, excess dangling-bond densities are observed which are likely to arise from a charge-induced bond-breaking mechanism.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 27/09/20 alle ore 13:05:08