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Titolo:
FILAMENT-ACTIVATED CHEMICAL-VAPOR-DEPOSITION OF NITRIDE THIN-FILMS
Autore:
DESHPANDE SV; DUPUIE JL; GULARI E;
Indirizzi:
UNIV MICHIGAN,DEPT CHEM ENGN ANN ARBOR MI 48109 UNIV MICHIGAN,CTR DISPLAY TECHNOL & MFG ANN ARBOR MI 48109
Titolo Testata:
Advanced materials for optics and electronics
fascicolo: 3, volume: 6, anno: 1996,
pagine: 135 - 146
SICI:
1057-9257(1996)6:3<135:FCONT>2.0.ZU;2-9
Fonte:
ISI
Lingua:
ENG
Soggetto:
SILICON-NITRIDE; TITANIUM NITRIDE; AMORPHOUS-SILICON; LOW-PRESSURE; ELECTRICAL-PROPERTIES; ASSISTED DEPOSITION; LOW-TEMPERATURES; DIAMOND; GROWTH; SURFACE;
Keywords:
HOT FILAMENT CHEMICAL VAPOR DEPOSITION; CVD; HIGH-RATE DEPOSITION; AMMONIA; SILICON NITRIDE; ALUMINUM NITRIDE; TITANIUM NITRIDE;
Tipo documento:
Review
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
52
Recensione:
Indirizzi per estratti:
Citazione:
S.V. Deshpande et al., "FILAMENT-ACTIVATED CHEMICAL-VAPOR-DEPOSITION OF NITRIDE THIN-FILMS", Advanced materials for optics and electronics, 6(3), 1996, pp. 135-146

Abstract

We have applied the novel method of hot filament-activated chemical vapour deposition (HFCVD) for low-temperature deposition of a variety of nitride thin films. In this paper the results from our recent work on aluminium, silicon and titanium nitride have been reviewed. In the HFCVD method a hot tungsten filament (1500-1850 degrees C) was utilisedto decompose ammonia in order to deposit nitride films at low substrate temperatures and high rates. The substrate temperatures ranged from245 to 600 degrees C. The film properties were characterised by a number of analytical and optical methods. The effect of various deposition conditions on film properties was studied. All the films obtained were of high chemical purity and had very low cr no detectable tungsten contamination from the filament metal.

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Documento generato il 26/09/20 alle ore 05:37:09