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Titolo:
CONTROL OF THIN-FILM STRUCTURE BY REACTANT PRESSURE IN ATOMIC LAYER DEPOSITION OF TIO2
Autore:
AARIK J; AIDLA A; SAMMELSELG V; SIIMON H; UUSTARE T;
Indirizzi:
TARTU STATE UNIV,INST EXPT PHYS & TECHOL EE-2400 TARTU ESTONIA TARTU STATE UNIV,INST EXPT PHYS & TECHOL EE-2400 TARTU ESTONIA ESTONIAN ACAD SCI,INST PHYS EE-2400 TARTU ESTONIA
Titolo Testata:
Journal of crystal growth
fascicolo: 3, volume: 169, anno: 1996,
pagine: 496 - 502
SICI:
0022-0248(1996)169:3<496:COTSBR>2.0.ZU;2-U
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL-VAPOR-DEPOSITION; IN-SITU; EPITAXY; GROWTH; OXIDE; MICROSCOPY; SURFACES;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
27
Recensione:
Indirizzi per estratti:
Citazione:
J. Aarik et al., "CONTROL OF THIN-FILM STRUCTURE BY REACTANT PRESSURE IN ATOMIC LAYER DEPOSITION OF TIO2", Journal of crystal growth, 169(3), 1996, pp. 496-502

Abstract

Atomic layer growth of TiO2 films from TiCl4 and H2O was examined. Itwas established that polycrystalline films of pure rutile, pure TiO2-II, or a mixture of them could be obtained at the same growth temperature (400 degrees C) and at the same TiCl4 vapor pressure (0.34 Pa) applying different water vapor pressures during the water pulse. Possiblegrowth mechanisms leading to formation of different structures are discussed.

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Documento generato il 04/12/20 alle ore 19:58:39