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Titolo:
CHEMICAL INTERACTION OF PULSED-LASER DEPOSITED CO WITH THE MOS2(0001)SURFACE
Autore:
BULICZ J; DELAGARZA LM; FUENTES S;
Indirizzi:
CTR INVEST CIENT & EDUC SUPER ENSENADA ENSENADA BAJA CALIFORNIA MEXICO CTR INVEST CIENT & EDUC SUPER ENSENADA ENSENADA BAJA CALIFORNIA MEXICO UNIV NACL AUTONOMA MEXICO,INST FIS,LAB ENSENADA ENSENADA 22800 BAJA CALIFORNIA MEXICO
Titolo Testata:
Surface science
fascicolo: 2, volume: 365, anno: 1996,
pagine: 411 - 421
SICI:
0039-6028(1996)365:2<411:CIOPDC>2.0.ZU;2-I
Fonte:
ISI
Lingua:
ENG
Soggetto:
RESOLUTION PHOTOELECTRON-SPECTROSCOPY; MOS2 SINGLE-CRYSTAL; FILMS; ADSORPTION; FE; SEMICONDUCTOR; BOMBARDMENT; MICROSCOPY; NI; CR;
Keywords:
AUGER ELECTRON SPECTROSCOPY; COBALT; MOLYBDENUM DISULFIDE; PULSED LASER DEPOSITION (PLD); REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION (RHEED); X-RAY PHOTOELECTRON SPECTROSCOPY;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
19
Recensione:
Indirizzi per estratti:
Citazione:
J. Bulicz et al., "CHEMICAL INTERACTION OF PULSED-LASER DEPOSITED CO WITH THE MOS2(0001)SURFACE", Surface science, 365(2), 1996, pp. 411-421

Abstract

The interaction between Mos(2) (0001) and pulsed laser deposited Co was studied with X-ray photoelectron spectroscopy, Auger electron spectroscopy, glancing angle high energy electron diffraction and scanning electron microscopy. 150 shots from a KrF excimer laser of wavelength 248 nm with fluence 10 J cm(-2) aimed at a solid Co target resulted inan energetic source of Co which produced an overlayer of randomly oriented crystallites at the MoS2(0001) surface. The deposition of Co wasaccompanied by the formation of metallic Mo and a net depletion of S at the substrate surface. Annealing to 770 K induced the formation of a limited quantity of metallic Mo. We interpret the formation of metallic Mo after Co deposition and annealing to 770 K as caused by surfacedamage suffered by the substrate due to sputtering by the energetic ions and neutrals produced by pulsed laser deposition. Annealing did not drive a reaction between Co and MoS2(0001) to completion indicating that Co is not strongly reactive with MoS2(0001). The relative concentrations of species calculated from XPS and AES intensities after deposition were consistent with S incorporated in the overlayer film and metallic Mo situated at the overlayer/substrate interface. Annealing between 770 and 1070 K caused agglomeration of the Co overlayer, resulting in particles of average size 1000 Angstrom distributed on the basal plane, and a high concentration of Co at the step edges.

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Documento generato il 25/11/20 alle ore 02:51:20