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Titolo:
NEW ASPECTS OF COPPER DIFFUSION IN SEMIINSULATING GALLIUM-ARSENIDE
Autore:
GRIEHL S; HERMS M; KLOBER J; NIKLAS JR; SIEGEL W;
Titolo Testata:
Applied physics letters
fascicolo: 12, volume: 69, anno: 1996,
pagine: 1767 - 1769
SICI:
0003-6951(1996)69:12<1767:NAOCDI>2.0.ZU;2-3
Fonte:
ISI
Lingua:
ENG
Soggetto:
GAAS; CU;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
10
Recensione:
Indirizzi per estratti:
Citazione:
S. Griehl et al., "NEW ASPECTS OF COPPER DIFFUSION IN SEMIINSULATING GALLIUM-ARSENIDE", Applied physics letters, 69(12), 1996, pp. 1767-1769

Abstract

The diffusion of copper in semi-insulating liquid-encapsulated-Czochralski-grown gallium arsenide at 800 degrees C was examined by photoluminescence, photoetching, secondary ion mass spectroscopy, and temperature dependent Hall measurements. A diffusion rate of 4.5 x 10(-6) cm(2) s(-1) obtained. It could be estimated that the diffusion takes placepredominantly by substitution on lattice sites. Diffusing copper migrates preferentially along the walls of the dislocation cellular network. (C) 1996 American Institute of Physics.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 07/08/20 alle ore 21:13:09