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Titolo:
X-RAY POLYTYPE EXAMINATION OF SIC BULK CRYSTALS IN BACK-REFLECTION GEOMETRY
Autore:
DRESSLER L; GOETZ K; KRAUSSLICH J;
Indirizzi:
UNIV JENA,INST OPT & QUANTENELEKT,MAX WIEN PLATZ 1 D-07743 JENA GERMANY
Titolo Testata:
Journal of applied crystallography
, volume: 29, anno: 1996,
parte:, 4
pagine: 378 - 382
SICI:
0021-8898(1996)29:<378:XPEOSB>2.0.ZU;2-2
Fonte:
ISI
Lingua:
ENG
Soggetto:
CARBIDE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
12
Recensione:
Indirizzi per estratti:
Citazione:
L. Dressler et al., "X-RAY POLYTYPE EXAMINATION OF SIC BULK CRYSTALS IN BACK-REFLECTION GEOMETRY", Journal of applied crystallography, 29, 1996, pp. 378-382

Abstract

Two X-ray methods in back-reflection geometry (diffraction techniqueswith Ni K alpha or Cu K alpha radiation and the Laue technique with 'white' radiation) were used for the polytype examination of SiC bulk crystals. The first method is useful for detecting polytypes with equipment such as a three-circle or four-circle diffractometer. We suggest a special procedure to search for certain family (polytype insensitive) and polytype-sensitive reflections. The second method is suitable for Laue camera equipment with an X-ray image intensifier tube of adequate imaging systems. The observed Laue diagrams are compared with computer simulations.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 27/09/20 alle ore 20:18:46