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Titolo:
SOURCE AND DRAIN PARASITIC RESISTANCES OF AMORPHOUS-SILICON TRANSISTORS - COMPARISON BETWEEN TOP NITRIDE AND BOTTOM NITRIDE CONFIGURATIONS
Autore:
ROLLAND A; RICHARD J; KLEIDER JP; MENCARAGLIA D;
Indirizzi:
FRANCE TELECOM,CNET,TECHNOPOLE ANTICIPA,2 AV P MARZIN F-22307 LANNIONFRANCE ECOLE SUPER ELECT,LAB GENIE ELECT PARIS F-91192 GIF SUR YVETTE FRANCE
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 8, volume: 35, anno: 1996,
pagine: 4257 - 4260
SICI:
0021-4922(1996)35:8<4257:SADPRO>2.0.ZU;2-J
Fonte:
ISI
Lingua:
ENG
Soggetto:
THIN-FILM TRANSISTORS; ELECTRICAL-PROPERTIES; DEVICES;
Keywords:
AMORPHOUS SILICON; THIN FILM TRANSISTORS; FIELD EFFECT MOBILITY; CONTACT RESISTANCES;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
10
Recensione:
Indirizzi per estratti:
Citazione:
A. Rolland et al., "SOURCE AND DRAIN PARASITIC RESISTANCES OF AMORPHOUS-SILICON TRANSISTORS - COMPARISON BETWEEN TOP NITRIDE AND BOTTOM NITRIDE CONFIGURATIONS", JPN J A P 1, 35(8), 1996, pp. 4257-4260

Abstract

The source and drain parasitic resistances of amorphous silicon basedthin film transistors (aSi:H TFT) are investigated using a very simple TFT model including a parameter extraction method. We show that thismethod provides an accurate measurement of these resistances and clearly explains their influence on the apparent field effect mobility mu(a) of the TFTs. We compare the parasitic resistances of TFTs for the top nitride (TN) and bottom nitride (BN) configurations and we show that the usual different performances observed on the two configurations can be mainly attributed to the differences in the parasitic resistances.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 30/09/20 alle ore 01:40:59