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Titolo:
AN INNOVATIVE MATHEMATICAL-MODEL OF RF-INDUCED QUIESCENT POINT SHIFT IN A BJT
Autore:
FERMI U; FIUMARA A; ROSSI G;
Indirizzi:
FIAT RES CTR ORBASSANO ITALY
Titolo Testata:
IEEE transactions on electromagnetic compatibility
fascicolo: 3, volume: 38, anno: 1996,
pagine: 244 - 249
SICI:
0018-9375(1996)38:3<244:AIMORQ>2.0.ZU;2-Z
Fonte:
ISI
Lingua:
ENG
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
9
Recensione:
Indirizzi per estratti:
Citazione:
U. Fermi et al., "AN INNOVATIVE MATHEMATICAL-MODEL OF RF-INDUCED QUIESCENT POINT SHIFT IN A BJT", IEEE transactions on electromagnetic compatibility, 38(3), 1996, pp. 244-249

Abstract

This paper describes the bipolar junction transistor (BJT) behavior under radio frequency (RF) injection in its base lead, Comparative results between a computer model and measured data over the range 5-1000 MHz are presented. In this work, various bias networks with different base bias resistors and various levels of injected power were taken into account, A new method to calculate the model electrical parameters is shown, without the direct knowledge of physical parameters such as doping profiles and geometrical dimensions of the junctions. For modeling purposes, a two-section hybrid pi model was used in conjunction with a Fourier expansion of the rectification response. A good agreement was found between the measured data and model data.

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Documento generato il 27/11/20 alle ore 14:28:51