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Titolo:
LOW-PRESSURE MOCVD OF TIN THIN-FILMS
Autore:
KIM SW; JIMBA H; SEKIGUCHI A; OKADA O; HOSOKAWA N;
Indirizzi:
ANELVA CORP,DIV RES & DEV,5-8-1 YOTSYA FUCHU TOKYO 183 JAPAN
Titolo Testata:
Applied surface science
, volume: 101, anno: 1996,
pagine: 546 - 550
SICI:
0169-4332(1996)101:<546:LMOTT>2.0.ZU;2-Q
Fonte:
ISI
Lingua:
ENG
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
3
Recensione:
Indirizzi per estratti:
Citazione:
S.W. Kim et al., "LOW-PRESSURE MOCVD OF TIN THIN-FILMS", Applied surface science, 101, 1996, pp. 546-550

Abstract

From multiple regression analysis in the bottom coverage and resistivity of TiN films deposited using tetrakis(diethylamino)titanium (TDEAT), contour maps were calculated as functions of wafer temperature and reactor pressure. High bottom coverage and low resistivity were predicted at low pressure and low temperature with NH3 additives. Films havebeen deposited below 400 degrees C and total reactor pressures below 133.3 Pa. Especially by adding a little NH3 to TDEAT, bottom coveragesof 100% have been accomplished in 4.0 aspect ratio contacts with 300 nm diameter. Film resistivities have been also decreased from 24,000 mu Omega cm to about 10,000 mu Omega cm with 15 seem NH3.

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Documento generato il 05/08/20 alle ore 01:38:14