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Titolo:
COPPER GERMANIDE SCHOTTKY-BARRIER CONTACTS TO SILICON
Autore:
DOYLE JP; SVENSSON BG; ABOELFOTOH MO;
Indirizzi:
ROYAL INST TECHNOL,ELECTRUM 229 S-16440 KISTA STOCKHOLM SWEDEN
Titolo Testata:
Journal of applied physics
fascicolo: 4, volume: 80, anno: 1996,
pagine: 2530 - 2532
SICI:
0021-8979(1996)80:4<2530:CGSCTS>2.0.ZU;2-Z
Fonte:
ISI
Lingua:
ENG
Soggetto:
THIN-FILMS; ELECTRICAL-PROPERTIES; N-TYPE; TRANSPORT; SILICIDES; SI;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
20
Recensione:
Indirizzi per estratti:
Citazione:
J.P. Doyle et al., "COPPER GERMANIDE SCHOTTKY-BARRIER CONTACTS TO SILICON", Journal of applied physics, 80(4), 1996, pp. 2530-2532

Abstract

Copper germanide Schottky barrier contacts have been fabricated on both n- and p-type silicon via sequential evaporation of thin layers of germanium and copper followed by an annealing schedule in the temperature range up to 673 K. Silicon is found to outdiffuse into the contactas observed by secondary-ion-mass spectrometry as the annealing temperature is increased. The barrier heights of the contacts were examinedvia capacitance-voltage and current-voltage techniques in the temperature range of 80-300 K while electrically active defects were probed by deep level transient spectroscopy. The Schottky barrier height for copper germanide is found to be independent of the germanium concentration and similar to that reported for copper silicide. (C) 1996 American Institute of Physics.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 23/09/20 alle ore 14:00:42