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Titolo:
ENHANCED X-RAY OPTICAL CONTRAST OF MO SI MULTILAYERS BY H-IMPLANTATION OF SI/
Autore:
SCHLATMANN R; KEPPEL A; XUE Y; VERHOEVEN J; MAREE CHM; HABRAKEN FHPM;
Indirizzi:
FOM,INST ATOM & MOL PHYS,KRUISLAAN 407 NL-1098 SJ AMSTERDAM NETHERLANDS UNIV UTRECHT,DEBYE INST,DEPT ATOM & INTERFACE PHYS NL-3508 TA UTRECHTNETHERLANDS
Titolo Testata:
Journal of applied physics
fascicolo: 4, volume: 80, anno: 1996,
pagine: 2121 - 2126
SICI:
0021-8979(1996)80:4<2121:EXOCOM>2.0.ZU;2-F
Fonte:
ISI
Lingua:
ENG
Soggetto:
AMORPHOUS-SILICON; ROUGHENING INSTABILITY; HYDROGEN; FILMS; REFLECTION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
29
Recensione:
Indirizzi per estratti:
Citazione:
R. Schlatmann et al., "ENHANCED X-RAY OPTICAL CONTRAST OF MO SI MULTILAYERS BY H-IMPLANTATION OF SI/", Journal of applied physics, 80(4), 1996, pp. 2121-2126

Abstract

To increase the x-ray optical contrast of Mo/Si multilayers, we studylow energy hydrogen ion implantation of amorphous Si layers. Using elastic recoil detection and Rutherford backscattering spectrometry, we measure the result of hydrogen implantation on Si atomic density. We find a lowering of Si atomic density, and, thus, an enhancement of x-ray optical contrast, as a result of H implantation. We find that the Siatomic density saturates at. a minimum of 64+/-5% of the crystalline value. We have also observed a minor smoothing effect of H+ ion bombardment. Combined with Kr+ ion bombardment, causing a very much larger smoothing of the Si surface, the atomic density is found to saturate ata minimum of 77+/-5% of the crystalline value. (C) 1996 American Institute of Physics.

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Documento generato il 27/11/20 alle ore 00:55:04